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HFA135NH40PbF
Vishay High Power Products
HEXFRED ?
Ultrafast Soft Recovery Diode, 275 A
FEATURES
Lug terminal
anode
? Very low Q rr and t rr
? Lead (Pb)-free
? Designed and qualified for industrial level
RoHS
COMPLIANT
BENEFITS
? Reduced RFI and EMI
HALF-PAK (D-67)
PRODUCT SUMMARY
I F (maximum)
V R
I F(DC) at T C
Base
cathode
275 A
400 V
138 A at 100 °C
? Reduced snubbing
DESCRIPTION
HEXFRED ? diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage
temperature range
SYMBOL
V R
I F
I FSM
E AS
P D
T J , T Stg
TEST CONDITIONS
T C = 25 °C
T C = 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum T J
T C = 25 °C
T C = 100 °C
VALUES
400
275
138
900
1.4
463
185
- 55 to + 150
UNITS
V
A
mJ
W
°C
ELECTRICAL SPECIFICATIONS (T J = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V BR
TEST CONDITIONS
I R = 100 μA
I F = 135 A
MIN.
400
-
TYP.
-
1.06
MAX.
-
1.65
UNITS
V
Maximum forward voltage
V FM
I F = 270 A
See fig. 1
-
1.2
2.0
I F = 135 A, T J = 125 °C
-
0.96
1.58
Maximum reverse
leakage current
Junction capacitance
I RM
C T
T J = 125 °C, V R = 400 V
V R = 200 V
See fig. 2
See fig. 3
-
-
-
280
3
380
mA
pF
Series inductance
L S
From top of terminal hole to mounting plane
-
6.0
-
nH
Document Number: 94050
Revision: 01-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
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